CAB-O-SIL® EL-1000, is a fumed silica product of nominal 110 m2/g B.E.T. surface area designed for the production of dispersions used to polish silicon semiconductors for Integrated Circuit fabrication.

CAB-O-SIL EL-1000 is characterized by:
  • High chemical purity
  • Narrow surface area range
  • Narrow particle size distribution
  • Lot-to-lot consistency

Fumed Metal Oxides for Electronic Applications:

Chemical Mechanical Planarization (CMP)

Since the mid-1990s, the use of CMP has grown rapidly in semiconductor manufacturing, as a polishing technique to achieve smooth, clean, and level surfaces. This is performed with carefully formulated and controlled dispersions of fumed metal oxides and other particles using specially designed equipment and polishing pads.

The polishing process removes excess dielectric insulation (oxide), as well as the tungsten (plugs and vias <500 nm) that have been built up in layers to create microcircuitry (wiring). Specifically, fumed silica dispersions play a critical role in two process technology segments: Inter-level Dielectric Planarization (ILD) and Shallow Trench Isolation (STI).

Why EL-1000?

CAB-O-SIL dispersions designed for this delicate, highly controlled process require fumed silica with carefully manufactured attributes to:

  • optimize the polishing/removal rate
  • ensure planarity (a function of paste build and distribution)
  • reduce the defect rate (scratches/wafer)
  • minimize the concentration of contaminant metals
  • ensure uniform, consistent lot-to-lot manufacturing
  • reduce waste and increase yield